Last Updated:
November 15, 2000
Recent Papers
Advanced Processing of Group III-Nitrides
Ferromagnetic Semiconductors Based Upon AlGaP
1.6A GaN Schottky Rectifiers on Bulk GaN Substrates
Charge Pumping in Sc
2
O
3
/GaN Gated MOS Diodes
Finite Difference Analysis of Thermal Characteristics of Continuous Wave Operation 850nm Lateral Current Injection and Implant-Apertured VCSEL with Flip-Chip Bond Design
Ferromagnetism in Cobalt-Implanted ZnO
Effect of Gate Length on DC Performance of AlGaN/GaN HEMTs Grown by MBE
Dilute Magnetic GaN, SiC and Related Semiconductors
Dry Etching of SiC
Room Temperature Ferromagnetism in GaMnN and GaMnP
Characterization of High Dose Fe Implantation into p-GaN
Magnetic and Structural Properties of Co, Cr, V Ion-Implanted GaN
Optical and Electrical Properties of GaMnN Films Grown by Molecular Beam Epitaxy
Magnetic Properties of n-GaMnN Thin Films
Magnetic Properties of p-Type GaMnP Grown by Molecular-Beam Epitaxy
Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers
Recent Advances in Gate Dielectric and Polarized Light Emission from GaN
Thermal Stability of Ion-Implanted Hydrogen in ZnO
Proton and Gamma-ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors
High Current Bulk GaN Schottky Rectifiers
Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths
High Power GaN Electronic Devices
HVPE-Grown AlGaN/GaN HEMTs
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
SiO
2
/Gd
2
O
3
/GaN Metal Oxide Semiconductor Field Effect Transistors
Growth of Dilute Magnetic Semiconductor GaMnN by Molecular Beam Epitaxy
Design of Junction Termination Structures for GaN Schottky Power Rectifiers
Magnetic Properties of Mn- and Fe-Implanted p-GaN
Vertical and Lateral Mobilities in n-(Ga, Mn)N
Electrical Characteristization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Nanoscale MRAM Elements
New Applications for GaN-based Semiconductors
New Directions in GaN-based Devices - High Voltage Rectifiers and Spin-Dependent Structures
Comparison of Ohmic Contact Properties on n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunctions
Influence of MgO andSc
2
O
3
Passivation on AlGaN/GaM High Electron Mobility Transitors
Proton Irradiation of MgO- or Sc
2
O
3
-Passivated AlGaN/GaN High Electron Mobility Transitors
Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
DC and RF Performance of Proton-Irradiated AlGaN/GaN High Electron Mobility Transistors
Pt Schottky Contacts to n-(Ga, Mn)N
Reversible Barrier Height Changes in Hydrogen-Sensitive Pd/GaN and Pt/GaN Diodes
Inversion Behavior in Sc
2
O
3
/GaN Gated Diodes
Magnetic Properties o Fe- and Mn-Implanted SiC
Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing
Advances in Wide Bandgap Materials for Semiconductor Spintronics
GaN and Other Materials for Semiconductor Spintronics
Surface Passivation of AlGaN/GaN HEMTs Using MBE-Grown MgO or Sc
2
O
3
Vertical and Lateral GaN Rectifiers on Free-Standing GaN Substrates
Wide Bandgap Ferromagnetic Semiconductors and Oxides
Hydrogen Incorporation and Diffusivity in Plasma-Exposed Bulk ZnO
Edge Termination Design and Simulation for Bulk GaN Rectifiers
Hydrogen-Sensitive GaN Schottky Diodes
Development of Advanced Plasma Process with an Optical Emission Spectroscopy-based Endpoint Technique for Etching of AlGaAs over GaAs in Manufacture of Heterojunction Bipolar Transistors
Processing Techniques for InGaAs/InAlAs/InGaAs Spin Field Effect Transistors
Ion Implantation into GaN
A Review of Dry Etching of GaN and Related Materials
Fabrication and Performance of GaN Electronic Devices
GaN/AlGaN HBT Fabrication
GaN PN Junction Issues and Developments
Temperature Dependent Performance of GaN Schottky Diode Rectifiers
Dry Etching of GaN and Related Materials-Comparison of Techniques
Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN and A1N
Selective Dry Etching Of The GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems
Dry Etching To Form Submicron Features In Cmr Oxides: PrBaCaMnO3 and LaSrMnO3
Inductively Coupled Plasma Etching Of III-Nitrides In Cl2/Xe, Cl2/Ar and Cl2/He
Low Bias Dry Etchinf of SiC and SiCN in ICP NF3 Discharges
Photoelectrochemical Etching of In
x
Ga
1-x
N
Plasma Etching of NiFeCo, NiMnSb and CoFeB-Based Multilayers
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