
Last Updated:
June 05, 2000
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Group Members
Professor Stephen Pearton
Steve Pearton is a Professor of Materials Science and Engineering
at the University of Florida. Prior to joining the university
in 1994 he spent 10 years as a Member of Technical Staff at AT&T
Bell Laboratories(now Lucent Technologies) in Murray Hill, NJ.
He received his Ph.D. in physics from the University of Tasmania
in Australia in 1983 and worked briefly at the Australian Atomic
Energy Commission near Sydney prior to spending a year as a postdoctoral
research associate at UC Berkeley and Lawrence Berkeley Laboratory.
He is author or co-author of approximately 590 journal articles,
has given over 100 invited talks at international conferences,
and has authored or edited 7 books.
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Ms. Paula Mathis
Ms. Paula
Mathis (GROUP SECRETARY)
Paula is the most indispensable person in the
whole group. She handles all purchase orders, travel
arrangements, visas, most typing of publications,
contract reports and day-to-day emergencies. She
joined us in 1995.
e-mail : pmath@mse.ufl.edu
phone : 352-846-1181
fax : 352-846-1182
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Hyun Cho
Hyun Cho is a postdoctoral research associate of Materials Science
and Engineering at University of Florida. He received his Ph.D.
in Inorganic Materials Engineering from Hanyang University in
Korea in 1996, and spent his time at Ceramic Materials Research
Institute (CMI) as a research associate prior to joining Professor
Pearton's research group in May, 1997. He is author or co-author
of around 50 journal papers and a member of MRS and AVS. His current
interests include developing of high density plasma and photoelectrochemical
etch process for wide-bandgap semiconductor materials, especially
III-nitrides, for fabrication of high power/high temperature electronics
and short wavelength photonics.
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David Hays
David Hays joined the Pearton research group in October, 1996
as an undergraduate research assistant. He investigated selective
and non-selective wet etches for GaAs, AlGaAs, and InGaP. He also
performed plasma damage studies and effects of hydrogenation in
III-V's. David received his Bachelor's degree in Materials Science
and Engineering from the University of Florida in May, 1998 and
continues his research as a graduate student. His current research
includes; developing selective dry etch chemistries for the GaAs/AlGaAs/InGaP
and GaN/InN/AlN semiconductor systems, and developing high etch
rate chemistries for Si MEMS processing. He will graduate in August,
1999 with a Masters degree in Materials Science and Engineering.
He has authored more than 25 technical papers and 2 conference
papers, and is a member of TMS, AVS, MRS, and ECS.
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KeeBum Jung
KeeBum Jung is a Ph. D. candidate of Materials Science and Engineering
at the University of Florida. He received his M. S. degree in
Electrical Engineering from the University of Florida in May 1996,
and B. S. degree in Applied Physics from Inha University, Korea.
His primary area of research is development of high density plasma
etch processes for magnetic materials for magnetoresistive random
access memory (MRAM) and giant magnetoresistive read/write head.
He is an author or co-author of approximately 35 journal articles.
He is a member of APS, AVS, MRS and TMS.
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Xian-an Cao
Xian-an Cao is a PhD student from China. He received his BS degree
in Physics from Fudan University in Shanghai in 1995. After completion
of his Master degree study in the Surface Physics Laboratory in
Fudan, he joined this group in the fall, 1997. His research will
focus on implantation of GaN and related materials. His interests
also cover other areas of semiconductor device processing, including
wet and dry etching, rapid thermal annealing, contact, etc.
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Kyu-pil Lee
Who is Kyu-pil Lee (updated)?
Kyu-pil Lee was born in Korea on May 28, 1961 and he is a Christian. He received his B.S. degree in Material Science and Engineering from Han Yang University in Seoul, Korea in 1985 and M.S degree in Material Science and Engineering from University of Florida in Gainesville, Florida in 2000.
He joined the Semiconductor Research and Development Center of Samsung Electronics Co. in 1985. Since then he has worked as an architect for the development of CMOS technology and products, such as the 1Mb, 4Mb, 16Mb, 64Mb, 256Mb, 1Gbits, SOI-based CMOS memory devices and Low Voltage Battery Operation (LVBO) memory devices. In 1997, Samsung awarded him one of the best engineer to develop 1Giga-bit Dynamic Random Access Memory (1Gb DRAM) of the world's first, and the excellent Patent Award for his R&D patent work for the Samsung.
His publication is extensive and including a total of approximately over 35 journal papers and over 40 conference papers. Also he has received over 45 Korean patents, over 20 US, 12 Japanese, and several German, French, Italian and Taiwan patents for his original invention in the field.
His credentials have earned him a place among the most influential individuals. Likewise, he listed in "Who's Who in America" and " Who's Who in Science and Technologies " and "Korean Biographical Dictionary" respectively.
He joined the University of Florida for Ph.D. program according to the Samsung Human Resource Cultivation Program in 1998, and he is focusing on the development of Heterojunction Bipolar Transistor (HBT) using wide band gap materials. He is interested in Spintronic Devices using magnetic materials for the next generation memory devices
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JeWon Lee
JeWon Lee was born in Seoul, Korea and received the B. S. degree
in Inorganic Materials Engineering from the Hanyang University
in Korea (1993). He then moved to the University of Florida, and
received the M. S. and will be conferred the Ph. D. degree in
the department of materials science and engineering in 1995 and
1997, respectively, under the guidance of Prof. Stephen J. Pearton.
He spent his time in Sandia National Laboratories
as a contract engineer, in Bell Laboratories, Lucent
Technologies, Murray Hill, NJ as a visiting
scientist, and in Samsung Electronics in Korea as a
consultant in 1997.
His research has covered a variety of areas in
semiconductor device processing, including wet and
dry etching, plasma enhanced chemical vapor
deposition, ion implantation, surface degradation,
device damage, hydrogen passivation, rapid thermal
annealing and plasma process modeling. He has
especially developed many plasma etching recipes for
compound semiconductors, oxides, metals and flat
panel displays with both Electron Cyclotron
Resonance and Inductively Coupled Plasma sources,
which has led to several awards to him as a graduate
student.
He is a member of ECS, AVS, MRS and TMS and an author of over
80 journal papers and 50 conference papers. He will start his
industrial career in Plasma-Therm Inc, St. Petersburg, FL in 1998.
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Cathy Vartuli
Cathy Vartuli received her Ph.D. in December 1996 for a thesis
entitled "Development of Device Processing Techniques for
III-Nitrides". She is now employed at Lucent Technologies
in Orlando FL, leading a group in the characterization area.
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Juan-Juan Wang
Juan-Juan Wang had joined Dr. Pearton's research group in Summer,
1997 and received her Master and Ph.D. degrees in August 1998
and May 2002, respectively. She received her BS degree in Chemical
Engineering from Chengdu University of Science and Technology
in 1990, in China.
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Jin Hong
Jin Hong received his Ph.D. in December 1998 for a thesis entitled
"Inductively Coupled Plasma and Electron Cyclotron Resonance
Plasma Etching of InGaAlP Compound Semiconductor System".
He is now employed at Samsung Semiconductor in Korea.
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Kwang Baik
Kwang Baik received his Bachelor's degree in Metallurgical Engineering
Department at Yonsei University in Seoul, Korea in Fall 1998 and
his Master degree in Materials Science and Engineering Department
at the University of Florida in Spring 2002. His master thesis
is titled "The Effect of Plasma Enhanced Chemical Vapor Deposition
Passivation Layers on GaN." He is pursuing his Ph.D. in UF
Materials Science and Engineering.
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Kelly Ip
Kelly Ip received her BS in Chemical Engineering and her MS in Materials
Science and Engineering at the University of Florida in December 2000
and December 2002, respectively.
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