Curriculum Vitae of Professor Stephen J. Pearton                                  

 

Education

 

Ph.D   Physics (1983) University of Tasmania, Australia (only one graduation ceremony per year-the actual Ph.D thesis was submitted and approved in 1982)

B.Sc. (Honours) First Class, Physics (1978) University of Tasmania, Australia

B.Sc.  Physics (1977) University of Tasmania, Australia

                                               

Total Citations (Feb 2008) 23,844

h-factor 65

                                                           

Scholarships

 

University Honours Scholarship (University of Tasmania) 1978

Australian Institute of Nuclear Science and Engineering Postgraduate Studentship (two given in Australia each year) 1979-82

 

Appointments

 

● 2001-present Distinguished Professor, Department of Materials Science and                                                                       Engineering, University of Florida(also Alumni Chair-2001-present)

 

●1994-2001 Professor, Department of Materials Science and Engineering,                                                                             University of Florida, Adjunct  Professor of Physics,University of Florida

 

●1984 – 1994   Member Technical Staff, AT&T Bell Labs, Murray Hill, NJ, 07974.

 

●1982 – 1983 Postdoctoral Research Associate, Department of Instrument Science and Engineering, Lawrence Berkeley Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley (joint appointment).

 

●1981 - 1982            Experimental Officer, Semiconductor and Radiation Physics Section, Applied Physics Division, Australian Atomic Energy Commission.

 

Major Accomplishments

 

     Contributed to the advancement of science and technology with world-class, trend-setting research in the field of electronic materials and devices. The pioneering and leadership nature of the contributions is evident by a large number of citations of his work in Science Citation Index (~23,000), US Patents (12 issued or pending), publications (~1280), and invited talks (~250 out of approximately 950 total talks).

 

(i)        At Bell Labs (1984-1988) developed a robust method of ion implantation isolation for advanced III-V transistors now widely used in cell phone chips, including GaAs field effect transistors, AlGaAs/GaAs High Electron Mobility Transistors(HEMTs) and AlGaAs/GaAs and InGaP/GaAs Heterojunction Bipolar Transistors (HBTs). This has made possible larger scales of integration and improved manufacturability of these devices. He developed both the scientific understanding and the application to devices. The market for these devices is well over $1B per year and many of the processes techniques were developed by Pearton.

 

(ii)       Part of a team at Bell Labs that demonstrated the first 10 Gb/sec high speed reliable HBT circuits based on advances in highly carbon-doped GaAs base layers (1989-1994).These devices are now common in cell phone chips.

 

(iii)     Developed the ion implantation doping and rapid thermal processes needed to activate implanted dopants in compound semiconductors (1985-1988), as well as establishing the characterization necessary to meaure activation efficiencies. Published the first demonstration of using graphire susceptors to rediuce thermal stresses in GaAs wafers during RTA (1988). He was the first to demonstrate p-type doping in GaN using ion implantation (1995) and the first to use ion implantation to create room temperature ferromagnetic semiconductors for spintronic applications.

 

(iv)     First to apply high density plasma etching techniques to compound semiconductor device fabrication (1989-1993). He pioneered the plasma chemistries used for etching a large variety of devices, including HBTs, HEMTs and laser diodes. These processes are now standard in most III-V device companies, including those for GaN light-emitting diodes and articles on this work have been featured in Physics Today,the Wall Street Journal and the New York Times. He showed that the high density plasma regime was able to initiate low damage etching with high rates. He pioneered the approaches needed to measure the effects of ion damage in these materials. First to demonstrate replacement of Freon-12 with more environmentally friendly gases for selective etching of GaAs over AlGaAs. He has published over 200 articles in this field and presented many invited talks on the topic at TMS, MRS, ECS and AVS meetings.

 

(v)      Made fundamental contributions to the understanding of the role of defects and impurities in thin films, especially hydrogen, on the performance of electronic and photonic devices. First to identify the effect of hydrogen passivation on device reliability in GaAs devices (1992-1994). His review article on Hydrogen in Crystalline Semiconductors has been cited over 750 times and the book on a similar topic over 450 times and he has been invited to give plenary talks on this topic at all the major conferences in this field, including the International Conference on Defects in Semiconductors, IUPAC workshops, TMS, MRS, ECS, and APS.

 

(vi)     Developed new Ohmic and Schottky contact metallurgies for all of the major compound semiconductor materials used in electronic and photonic devices,including GaAs/AlGaAs,InP/InGaAs,InAlAs/InGaAs and InGaN/AlGaN,especially focusing on developing thermally stable contacts based on high temperature metals such as W, the boride and nitride families(1990-2007).

 

(vii) Part of a team that developed the first low interface density gate oxides for GaN(1998-2005).World record GaN and AlGaN power rectifier and pin diode performance in terms of breakdown voltage (9.8 kV) and total current (160A) (1999-2002).

 

(viii) Part of a multidisciplinary effort to develop semiconductor-based hydrogen sensors capable of ppm detection sensitivity at room temperature for NASA (2003-2006) Developed the use of Pt or Pd gates to improve the catalytic decomposition of hydrogen to the atomic species at room temperature. Also showed the use of Pd or Pt coatings on ZnO nanowire sensors that operate at extremely low power levels (µW) and thus are capable of being powered by energy harvesting methods.

 

(ix) Part of a team that has pioneered the use of wide bandgap semiconductor sensors for chemical and biological detection, including DNA, kidney disease markers and proteins (2005-2007).

      

His work over the past 20 years in these fields has been cited over 23,000 times according to the ISI Web of Science, making him of the world’s most-cited scientists. To put this in perspective, for the period 1981-1997 (the most recent period for which information is available), the 10 most-cited physicists average from 1366-639 citations per year. Dr.Pearton’s average of approximately 1000 per year for the period 1984-2007 place him in the very top rank in any scientific discipline. He has been recognized as Fellow by the IEEE, AVS, TMS, APS and ECS. His work encompasses a broad, multidisciplinary approach, borrowing from physics, chemistry, electrical, chemical and materials science and engineering to understand the effects of processing techniques on the performance of advanced compound semiconductor devices. These contributions have been critical to the commercialization of these devices in cell phones, wireless communication systems, collision-avoidance radar, high density DVDs and traffic lights and other displays. Many of the companies manufacturing these products use fabrication processes that are based on results initially reported by Pearton. He has been extensively quoted in semiconductor industry publications, showing the value of his work to technology as well as the basic science aspects.The Bell Labs research efforts on GaAs-based MESFETs, HEMTs and HBTs in the period 1984-1994 were pivotal in providing the processing technology that has enabled these devices to be successfully commercialized around the world.  The 1990’s saw these devices achieve significant markets in lightwave communication systems and hand-held phones.  Pearton was primarily responsible for the development of dry etching, implant doping and isolation and rapid thermal processing techniques that are now common practice throughout the industry.  He has also been one of the prime movers in development of improved processing methods for emerging GaN-based electronics and photonics. This effort has led to the realization of the first GaN MOSFET (Appl. Phys. Lett. 73 3893 1998), one of the first GaN/AlGaN HBTs (MRS Internet J. Nitride Semicon. Res. 3 41 1998) and rectifiers with record blocking voltages (Appl. Phys. Lett. 76 4 2000). In addition he has played a major role in establishing the effects of atomic hydrogen in compound semiconductors, particularly its incorporation during processing steps such as dry and wet etching, PECVD, solvent cleaning and annealing and its role in influencing device performance (eg. dc current gain in  HBTs, ohmic contact resistance).

 

 

HONORS AND PROFESSIONAL ACTIVITIES

•      2007 J.J.Ebers Award, IEEE

●    2007 John Thornton Award, AVS

● Elected to the rank of TMS Fellows (The Metals, Minerals and Materials Society), 2007. (maximum number of living Fellows limited to 100).

•     Fellow of American Physical Society, 2006.

•       Fellow, American Vacuum Society, 2002

•     Fellow of IEEE, 2001. 

•       Fellow of the ECS (Electrochemical Society), 1996.

•       Electronics Division Award, The Electrochemical Society, 2005.

•       Recognized by the ISI (Institute for Scientific Information) as “ISI’s 1120 Most Cited Physicists in the World” (for the period of 1981 – 1997) with the rank of  82nd out of 1120 best physical science researchers.

●      Distinguished Lecturer,IEEE Electron Devices Society,2001-2004

•       Editor, Solid-State Electronics, 1994-2003.

•       Associate Editor, Journal of Vacuum Science and Technology B. 1993-1995 and Journal Vacuum Science and Technol. A, 2000-2002.

•       Guest Editor for JEM Special Issues on GaN,SiC and ZnO(2004) and Emerging Electronic Materials(1998)

•   Editorial Board, Applied Physics Letters and Journal of Applied Physics, 2006-2009.

•   Editorial Board, Applied Physics Reviews, 2006-2009

•   Editorial Board - Materials Science & Engineering Reports, and Diffusion and Defect Data, 1994-present

•  Co-organizer of 10  symposium for MRS  on (i)Oxygen, Carbon, Hydrogen and Nitrogen in Si, Fall Meeting of Materials Research Society 1985; Editor of MRS Vol. 59 (1986), (ii)Defects in Electronic Materials, Fall Meeting of the Materials Research Society 1987: Editor of MRS Vol. 104 (1988),(iii) Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures, 1990 Spring MRS Meeting, San Francisco, CA, April 1990; Editor of MR  S Vol. 184 (1990),(iv) Adv. III-V Compound Semiconductor Growth, Processing & Devices, MRS Fall 1991, Boston, December 1991; Editor of MRS Vol. 240 (1992),(v) III-V Electronic & Photonic Device Fabrication and Performance, MRS Spring 1993, San Francisco, April 1993; Editor of MRS Vol. 300 (1993),(vi) Compound Semiconductor Electronics & Photonics, MRS Spring 1996, San Francisco, April 1996,(vii) Power Semicond. Mat. & Device Symp., MRS, Boston, December 1997,(viii) , GaN and related materials,Boston,1998 Fall MRS ,Nov 1998, (ix) Compound Semiconductor Surface Passivation and Novel Device Processing, MRS Spring Meeting, San Francisco, April 1999, (x) New Applications for Wide Bandgap Semiconductors, 2003 Spring MRS Symposium, San Francisco, April 2003.

• Co-organizer of 14 symposia for ECS,on (i) RTP of Electron Materials and Devices, ECS Meeting, Atlanta, GA, May 1988, (ii)Ion Implantation in Elemental and Compound Semiconductors, ECS meeting, Florida, October 1989; Editor of ECS Vol. 90-13 (1990), (iii) III-V Nitrides, ECS Meeting, Los Angeles, CA, May 1996, (iv)Wide Bandgap Nitrides, ECS Meeting, Chicago, IL, October 1995, (v) Symp. on SOTAPOCS, ECS Meeting, Los Angeles, CA, May 1996, (vi)High Speed III-V Electronics for Wireless Applic., ECS Meeting, San Antonio, October 1996,(vii) GaN Symp., ECS, Paris, September 1997,(viii) Light-Emitting Devices for Optoelectronic Applications, 193rd ECS Meeting, San Diego, May 1998,(ix) III-V Nitride Materials and Processes, 194th ECS Meeting, Boston, Nov. 1998,(x) Compound Semiconductor Power Transistors, 194th ECS Meeting, Boston, Nov. 1998, (xi) III-Nitride-Based Semiconductor Electronics and Optical Devices, 199th Meeting of ECS, Washington, DC, March 2001,(xii) Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors, 201st Meeting of ECS, Philadelphia, May 2002,(xiii) , Nitrides and Related Materials, ECS, Orlando, October 2003,(xiv) Nitrides and Related Materials, ECS, Hawaii, Nov 2004   

• Editor “GaN and Related materials for Device Applications,” ed. S.J. Pearton, C.P. Kuo, special issue of MRS Bulletin, February ’97, Vol. 22(2), pp.17-57.

• Advisory Board, “Advances in Nanoscale Materials and Technologies,” (Academic Press, 2001).

•Editorial Board, Materials Today, 2002-present.

•Editorial Board, Superlattices and Microstructures, 2003-present.

•Advisory Board Member for book series, Handbook of Nanostructural Materials and Nanotechnology, 2000-present.

 

Some key papers:

     Ion Implantation for Isolation of III-V Semiconductors,  S.J.Pearton, Materials   Science Reports 4,pp 313-367(1990).This showed that the processing of many compound semiconductor devices could be simplified by using ion implantation to create resistive regions between devices for electrical isolation, rather than etching away the material or using a backfill of oxide to achieve isolation. This process is now standard in most III-V transistor technologies because of its high yield and ability to maintain a planar surface .

Hydrogen in Crystalline Semiconductors, S.J.Pearton, J.W.Corbett and T.S.Shi,Appl.Phys.A 43 pp.153-195(1987).This paper laid the groundwork for an intense period of activity by researchers around the world on the properties of hydrogen in single-crystal Si,GaAs and GaN. There were many conferences devoted to this topic and this paper was a catalyst in setting out what was known and what needed to be addressed by theorists and experimentalists. Hydrogen has proven to be particularly important in semiconductors, where it passivates the electrical activity of both donor and acceptor dopants and diffuses rapidly into the material even at room temperature during processes such as solvent cleaning, acid etching, plasma etching and sputter deposition. This has become very important as Si microchip processing temperatures are reduced in order to minimize diffusion in ever-smaller transistors. The source of the hydrogen can be background water vapor in vacuum systems or even photoresist and thus the origin of the large changes in electrical properties it causes are often difficult to identify unless one is aware that hydrogen may be the cause. It was hydrogen passivation of Mg acceptors in GaN that prevented realization of p-type doping in this material for a long period. Shuji Nakamura has stated publicly numerous times that he understood what was happening after reading the authors work and then was able to use annealing to drive the hydrogen off the Mg atoms and obtain p-type GaN. The review article was eventually turned into a book of the same title, which has been cited 385 times in the literature(ISI Web of Science),making a total of over 1000 citations for the two versions.

GaN:Processing,Defects and Devices,S.J.Pearton,J.C.Zolper,R.J.Shul and F.Ren,J.Appl.Phys.86,pp1-78(1999).This paper discussed progress in developing processing methods and covered devices such as lasers ,light-emitting diodes and transistors along with the effects of processing-induced defects on the performance of these devices. It has become a standard reference in the field and is unique in that is uses a multi-disciplinary approach, covering the materials, electrical engineering, chemistry and chemical processing of GaN.

    Whispering –Gallery Mode Microdisk Lasers, S.McCall, A.F.J.Levi, R.E.Slusher, S.J.Pearton and  R.A.Logan,Appl.Phys.Lett. 60, pp.289-291(1992).This reported a new microlaser design with extremely low threshold current that was reported in the New York Times and Wall Street Journal. It showed the potential of using lasers as optical computing elements to increase the speed of voice and data transmission systems. The work was made possible by a combined multi-disciplinary effort involving crystal growth, laser design, high resolution low damage plasma etching and novel testing.

 

Selected Publications

1.                  "Hydrogen Passivation of Gold-Related Deep Levels in Si," S.J. Pearton and Tavendale, Phys. Rev. B 26, No. 12, 7105 (1982).

2.                  "Motion of Deep Gold-Related Centers in Reverse Biased Si Junction Diodes at Room Temperature," S.J. Pearton and Tavendale, Appl. Phys. Lett. 41, No. 12 (1982).

3.                  "Hydrogenation of Au-Related Levels in Si by Electrolytic Doping," S.J. Pearton, W.L. Hansen, E.E. Haller and J.M. Kahn, J. Appl. Phys. 55, 1221 (1984).

4.                  "Electrical Activation of Implanted Be, Mg, Zn and Cd in GaAs by Rapid Thermal Annealing, "S.J. Pearton, K.D. Cummings and G.P. Vella-Coleiro, J. Appl. Phys. 58, 3252 (1985).

5.                  "Rapid Thermal Annealing in GaAs IC Processing," S.J. Pearton, K.D. Cummings and G.P. Vella-Coleiro, J. Electrochem. Soc. 132, 2743 (1985).

6.                  "Relationship Between Secondary Defects and Electrical Activation in Ion-Implanted, Rapidly Annealed GaAs," S.J. Pearton, R. Hull, D.C. Jacobson, J.M. Poate and J.S. Williams, Appl. Phys. Lett. 48, 38 (1986).

7.                  "Local Structure of S Impurities in GaAs," F. Sette, S.J. Pearton, J.M. Poate, J.E. Rowe and J. Stohr, Phys. Rev. Lett. 56, 2637 (1986).

8.                  "Hydrogen Injection and Neutralization of B-acceptors in Si Boiled in Water," A.J. Tavendale, A.A. Williams and S.J. Pearton, Appl. Phys. Lett. 48, 590 (1986).

9.                  "Kinetics of Implantation Enhanced Interdiffusion of Ga and Al at GaAs-Al1Ga-As MBE Grown Interfaces," J. Cibert, P.M. Petroff, D.J. Werder, S.J. Pearton, A.C. Gossard and J.H. English, Appl. Phys. Lett. 49, 223 (1986).

10.              "Optically Detected Carrier Confinement to One and Zero Dimension in GaAs Quantum Well Wires and Boxes, J. Cibert, P.M. Petroff, G.J. Dolan, S.J. Pearton, A.C. Gossard and J.H. English, Appl. Phys. Lett. 49, 1275 (1986).

11.              "Dopant Type Effects on the Diffusion of Deuterium in GaAs," S.J. Pearton, W.C. Dautremont-Smith,, J. Lopata, C.W. Tu and C.R. Abernathy, Phys. Rev. B 36, 4260 (1987).

12.              "Ion-Implantation and Activation Behavior of Si in MBE Grown GaAs-on-Si Substrates for GaAs MESFETs,” N. Chand, F. Ren, S.J. Pearton, N.J. Shah and A-Y. Cho, IEEE Electron Device Lett. 8, 185 (1987).

13.              "Hydrogen in Crystalline Semiconductors," S.J. Pearton, J.W. Corbett and T.S. Shi, Appl. Phys. A 43, 153 (1987).

14.              "Lattice Location of Deuterium Interacting with the B Acceptor in Si," B.B. Nielsen, J.V. Anderson and S.J. Pearton, Phys. Rev. Lett. 60, 321 (1988).

15.              "Low-Frequency Excitations of Acceptor-Hydrogen Complexes in Si," M. Stavola, S.J. Pearton, J. Lopata and W.C. Dautremont-Smith, Phys. Rev. B. 37, 8313 (1988).

16.              "Donor-Hydrogen Complexes in Passivated Si," K. Bergman, M. Stavola, S.J. Pearton and J. Lopata, Phys. Rev. B. 37, 2770 (1988).

17.              "The Structure of Acceptor-H and Donor-H Complexes in Si from Uniaxial Stress Studies," K. Bergman, M. Stavola, S.J. Pearton and T. Hayes, Phys. Rev. B 38, 9643 (1988).

18.              "Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Si," M. Stavola, K. Bergmann, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 61, 2786 (1988).

19.              "Reactive Ion Etching of GaAs with CCl2F2O2 - Etch Rates, Surface Chemistry and Residual Damage," S.J. Pearton, M.J. Vasile, K.S. Jones, K.T. Short, E. Lane, T.R. Fullowan, A.E. Von Neida and N.M.  Haegel, J. Appl. Phys. 65, 1281 (1989).

20.              "RTA of GaAs in a Graphite Susceptor - Comparison with Proximity Annealing," S.J. Pearton and R. Caruso, J. Appl. Phys. 66, 663 (1989).

21.              "Structure and Dynamics of the Be-H Complex in GaAs," M. Stavola, S.J. Pearton, J. Lopata, C.R. Abernathy and Bergman, Phys. Rev. B. 39, 8051 (1989).

22.              "RIE Induced Damage in GaAs and AlGaAs Using CH4/H2/Ar or CCl2F2/O2 Mixtures," S.J. Pearton, U.K. Chakrabarti and W.S. Hobson, J. Appl. Phys. 66, 2061 (1989).

23.              "Carbon in GaAs: Implantation and Isolation Characteristics," S.J. Pearton and C.R. Abernathy, Appl. Phys. Lett. 55, 678 (1989).

24.              "High Performance AlGaAs/GaAs SDHTs and Ring Oscillators Grown by MBE on Si," F. Ren, N. Chang, Y.K. Chen, S.J. Pearton, D.M. Tennant and D.J. Resnik, IEEE Electron Dev. Lett. 10, 559 (1989).

25.              "Ultra-High Doping of GaAs by Carbon During MOMBE," C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren and J. Kovalchick, Appl. Phys. Lett. 55, 1750 (1989).

26.              "Bias Controlled Intersubband Switching in a GaAs/AlGaAs QW Laser," K. Berthold, A.F. Levi, S.J. Pearton, R.J. Malik, W.Y. Jan and J.E. Cunningham,Appl. Phys. Lett. 55, 1382 (1989).

27.              "Real-time, in-situ Monitoring of GaAs and AlGaAs PL During Plasma Processing," A. Mitchell, R.A. Gottscho, S.J. Pearton and G.R. Schellerr, Appl. Phys. Lett. 56, 821 (1990).

28.              "Identification of a Fermi Resonance for a Defect in Si Deuterium-Boron Pair," G.D. Watkins, W.B. Fowler, MM. Stavola, G.G. Deleco, D.M. Kozach, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 64, 467 (1990).

29.              "Real-time Monitoring of Low Temperature, Hydrogen Plasma Passivation of GaAs," R.A. Gottscho, B.L. Preppernau, S.J. Pearton, B. Emerson, Giapis, J. Appl. Phys. 68, 440 (1990).

30.              "Ion Implantation for Isolation of III-V Semiconductors," S.J. Pearton, Mat. Sci. Rep. 4, 313 (1990).

31.              "Carbon-doped Base GaAs-AlGaAs HBTs Grown by MO-MBE and MO-CVD Regrowth," W.S. Hobson, F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan and J. Lothian, IEEE Electron. Dev. Lett. 11, 241 (1990).

32.              "Implant Isolation of GaAs-AlGaAs HBT Structures," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan, J. Lothian and A.W. Yanof, Appl. Phys. Lett. 56, 860 (1990).

33.              "Reproducible Group V Partial Pressure RTA of InP and GaAs," S.J. Pearton, A. Katz and M. Geva, J. Appl. Phys. 68, 2482 (1990).

34.              "Use of Hydrogenated Chlorofluorocarbon Mixtures for RIE of In-based III-V Semiconductors," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. Derktis and A.P. Kinsella, J. Vac. Sci. Technol. B 8, 1274 (1990).

35.              "Hydrogen in Carbon-doped GaAs Grown by MOMBE," D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy and J. Lopata, Appl. Phys. Lett. 57, 2561 (1990).

36.              "Rapid Isothermal Processing for Fabrication of GaAs Based Electronic Devices," S.J. Pearton, F. Ren, A. Katz, T.R. Fullowan, C.R. Abernathy, W.S. Hobson and R.F. Kopf, IEEE Electron. Dev. 39, 154 (1992).

37.              "GaAs-AlGaAs HBT with Carbon-Doped Base Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan, J. Lothian and A.S. Jordan, Electron Lett. 26, 724 (1990).

38.               “In-based p-ohmic Contacts to the Base Layer of AlGaAs/GaAs HBT," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan and A.B. Emerson, Appl. Phys. Lett. 58, 1158 (1991).

39.              "AlGaAs/GaAs HEMTs, Inverters and Ring Oscillators with InGaAs and AlGaAs Etch Stop Layers," F. Ren, S.J. Pearton, R. Kopf, S. Chu and S. Pei, Electron Lett. 27, 1175 (1991).

40.              "10 Gbit/s AlGaAs/GaAs HBT Driver IC For Lasers or Lightwave Modulators," R. Montgomery, F. Ren, C.R. Abernathy, T. Fullowan, R. Kopf, P. Smith, S.J. Pearton, P. Wisk, J. Lothian and R. Nottenburg, Electron. Lett. 27, 1827 (1991).

41.              "Whispering Mode Microdisk Lasers," S. McCall, A. Levi, R. Slusher, S.J. Pearton and R.A. Logan, Appl. Phys. Lett. 60, 289 (1992).

42.              "Incorporation of Hydrogen in Semiconductors During Crystal Growth and Device Processing," S.J. Pearton, M. Stavola and J.W. Corbett, Ad. Mat. 4, 332 (1992).

43.              "Stability of C and Be-doped Base GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C.R. Abernathy, R. Kopf, S. Downey and S.J. Pearton, Appl. Phys. Lett. 59, 3613 (1991).

44.              "Batch Fabrication and Structure of Integrated GaAs/AlGaAs FET-SEED Devices," L. D'Asario, E. Laskowski, S. Pei, R. Leigenguth, R. Woodward, M. Focht, A. Lentine, R. Kopf, J. Kuo, S.J. Pearton, F. Ren and L.E. Smith, IEEE Electron Dev. Lett. EDL 13, 528 (1992).

45.              "0.25 mm Pseudomorphic HEMTs Processed with Damage-Free Dry Etch Gate Recess Technology," F. Ren, S.J. Pearton, C.R. Abernathy, C.S. Wu, M. Hu, C.K. Pai, D.C. Wang and C.P. Wen, IEEE Electron Dev. 39, 2701 (1992).

46.              "Single Electron Capacitance Spectroscopy of Discrete Quantum Wells," R. Ashoori, H.L. Stormer, J.S. Weiner, L. Pfeiffer, S.J. Pearton, K.W. Baldwin and K. West, Phy. Rev. Lett. 68, 3088 (1992).

47.              "Directional Light Coupling from Microdisk Lasers," A. Levi, R. Slusher, S. McCall, J. Glass, S.J. Pearton and R. Logan, Appl. Phys. Lett. 62, 561 (1993).

48.              "Dry-Processed Through-Wafer Via Holes for GaAs Power Devices," S.J. Pearton, F. Ren, A. Katz, J.R. Lothian, T.R. Fullowan and B. Tseng, J. Vac. Sci. Technol. B 11, 153 (1993).

49.              "Improved Performance of C-doped GaAs Based HBTs Through Use of InGaP," C.R. Abernathy, F. Ren, P. Wisk, S.J. Pearton and R. Esaqui, Appl. Phys. Lett. 61, 1092 (1992).

50.              "Self-aligned InGaP/GaAs HBTs for Microwave Power Applications," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, P. Wisk, T. Fullowan, Y. Chen, L. Yang, S. Fu and H. Lin, IEEE Electron. Dev. Lett. EDL 14, 332 (1993).

51.              "Thermal Stability of Implanted Dopants in GaN," R. G. Wilson, S. J. Pearton, C. R. Abernathy, and J. M. Zavada, Appl. Phys. Lett. 66, 2351 (1995).

52.              "The Role of Hydrogen in Current-Induced Degradation of C-Doped GaAs/AlGaAs HBTs," F. Ren, C.R. Abernathy, S. Chu, J. Coblisan and S.J. Pearton, Solid State Electron 38, 1137 (1995).

53.              "Ion Implantation Doping and Isolation of GaN," S.J. Pearton, C.B. Vartuli, J.C. Zolper and R.A. Stall, Appl. Phys. Lett. 67, 1435 (1995).

54.              "High Efficiency Microwave Power AlGaAs/InGaAs of HEMTs Fabricated by Dry Etch Single Gate Recess," C.S. Wu, F. Ren, S.J. Pearton, M. Hu, C.K. Puo and R.F. Wang, IEEE Trans. Electron. Dev. 42, 1419 (1995).

55.               “Ca and O Ion Implantation Doping of GaN,” J.C. Zolper, R.G. Wilson, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 68, 1945 (1996).

56.               “Inductively Coupled Plasma Etching of GaN,” R.J. Shul, G.B. McClellan, S.A. Casalnuovo, D.J. Rieger, S.J. Pearton, C. Constantine, C. Barratt, R.K. Karlicek, C. Tran and M. Schurmann, Appl. Phys. Lett. 69, 1119 (1996).

57.               “Electrical and Structural Analysis of High Dose Si and Mg Implantation in GaN,” J.C. Zolper, M.H. Crawford, H. Tan, J. Williams, J. Zhen, D. Cockayne, S.J. Pearton and R.F. Karlicek, Appl. Phys. Lett. 70, 2729 (1997).

58.              “Unintentional Hydrogenation of GaN and Related Alloys During Processing,” S.J. Pearton, C.R. Abernathy, C. Vartuli, J. Lee, J. MacKenzie, R.G. Wilson, R. Shul, F. Ren and J. Zavada, J. Vac. Sci. Technol. A 14, 831 (1996).

59.               “Annealing of Ion-Implanted GaN,” H.H. Tan, J.S. Williams, J. Zou, D.J. Cockayne, S.J. Pearton, J.C. Zolper and R.A. Stall, Appl. Phys. Lett. 72,1190 (1998).

60.               “Ultra High Si+ Implant Activation Efficiency in GaN Using a High Temperature RTP System,” X.A. Cao, C.R. Abernathy, R.K. Singh, S.J. Pearton, M. Fu, V. Sarvepalli, J.A.  Sekhar, J.C. Zolper, D.J. Rieger, J. Han, T.J. Drummond, R.J. Shul and R.G. Wilson, Appl. Phys. Lett. 73, 206 (1998).

61.               “Effect of Temperature on Ga2O3(Gd2O3)/GaN Metal-Oxide-Semiconductor Field-Effect Transistors,” F. Ren, M. Hong, S.N.G. Chu, M.A. Marcus, M.J. Schurmann, A. Baca, S.J. Pearton and C.R. Abernathy, Appl. Phys. Lett. 73, 3893 (1998).

62.               “Relative Merits of Cl2 and CO/NH3 Plasma Chemistries for Dry Etching of MRAM Device Elements,” K.B. Jung, H. Cho, Y.B. Hahn, E.S. Lambers, S. Onishi, D. Johnson, A.T. Hurst, J.R. Childress, Y.D. Park and S.J. Pearton, J. Appl. Phys. 85, 4788 (1999).

63.               “Growth and Fabrication of GaN/AlGaN HBT,” J. Han, A.G. Baca, R.J. Shul, C.G. Willison, L. Zhang, F. Ren, A.P. Zhang, G.T. Dang, S.M. Donovan, X.A. Cao, H. Cho, K.B. Jung, C.R. Abernathy, S.J. Pearton and R.G. Wilson, Appl. Phys. Lett. 74, 27023 (1999).

64.               “GaN: Processing, Defects and Devices,” S.J. Pearton, J.C. Zolper, R.J. Shul and F. Ren, J. Appl. Phys., Applied Physics Reviews 86, 1 (1999).

65.               “Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes,” X.A. Cao, H. Cho, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).

66.               “Effects of Interfacial Oxides on Schottky Barrier Contacts to n- and p-type GaN,” X.A. Cao, S.J. Pearton, G. Dang, A.P. Zhang, F. Ren, and J. M. Van Hove, Appl. Phys. Lett. 75, 4130 (1999).

67.               “Al Composition Dependence of Breakdown Voltage in AlxGa1-xN Schottky Rectifiers,” A.P. Zhang, G. Dang, F. Ren, J. Han, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, J.M. Redwing, X.A. Cao and S.J. Pearton, Appl. Phys. Lett. 76, 1767 (2000).

68.               “High Voltage GaN Schottky Rectifiers,” G. Dang, A. Zhang, F. Ren, X. Cao, S.J. Pearton, H. Cho, J. Han, J.-I. Chyi, C.-M. Lee, C.-C. Chuo, S.N.G. Chu and R.G. Wilson, IEEE Trans Electron. Dev. 47, 692 (2000).

69.               “GaN n- and p-type Schottky Diodes: Effect of Dry Etch Damage,” X. Cao, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren and J.M. Van Hove, IEEE Trans. Electron. Dev. 47, 1320 (2000).

70.              “Fabrication and Performance of GaN Electronic Devices,” S.J. Pearton, F. Ren, A.P. Zhang and K.P. Lee, Mat. Sci. Eng. R. 30, 55 (2000).

71.              “Gd2O3/GaN MOSFET,” J.W. Johnson, B. Luo, F. Ren, B.P. Gila, W. Krishnamoorthy, C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee and C.C. Chuo, Appl. Phys. Lett. 77, 3230 (2000).

72.              Comparison of GaN p-i-n and Schottky Rectifier Performance,” A.P. Zhang, G. Dang, F. Ren, H. Cho, K.-P. Lee, S.J. Pearton, J.I. Chyi, T.E. Nee, C.-M. Lee and C.C. Chuo, IEEE Trans. Electron. Dev. ED 48, 407 (2001).

73.              “Device Characteristics of the GaAs/InGaAsN/GaAs pnp Double HBT,” P. Chang, N. Li, A.G. Baca, H.O. Hou, C. Monier, J. LaRoche, F. Ren and S.J. Pearton, IEEE Electron Dev. Lett. EDL-22, 113 (2001).

74.              “Ion Implantation into GaN,” S.O. Kucheyev, J.S. Williams and S.J. Pearton, Mat. Sci. Eng. R 33, 51 (2001).

75.               “High-Speed Modulation of 850nm Intracavity Contacted, Shallow Implant Apertured VCSELs,” G. Dang, W.S. Hobson, C.M.F. Chirovsky, J. Lopata, M. Tyalki, S.N.G. Chu, F. Ren and S.J. Pearton, IEEE Photonics Technology Lett. 13, 924 (2001).

76.               “Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers,” J.W. Johnson, A.P. Zhang, B. Luo, S.J. Pearton, S.S. Park, Y.D. Park and J.-I. Chyi, IEEE Trans. Electron. Dev. 49, 32 (2002).

77.               “Use of Ion Implantation to Facilitate the Discovery and Characterization of Ferromagnetic Semiconductors,” N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, J. Appl. Phys. 91, 7499 (2002).

78.               “Characteristics of MgO/GaN Gate-Controlled MOS Diodes,” J. Kim, R. Mehandru, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton and Y. Irokawa, Appl. Phys. Lett. 80, 4555 (2002).

79.               “Inversion Behavior in Sc2O3/GaN Gated Diodes,” J. Kim, R. Mehandru, B. Luo, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton and Y. Irokawa, Appl. Phys. Lett. 81, 373 (2002).

80.               “Unconventional Carrier-Mediated Ferromagnetism Above Room Temperature in Ion-Implanted (Ga,Mn)P : C,” N. Theodoropoulou, A.F. Hebard, M. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu and R.G. Wilson, Phys. Rev. Lett. 89, 107203 (2002).

81.               “Effects of Sc2O3 and MgO Passivation Layers on the Output Power of AlGaN/GaN HEMTs,” J.K. Gillespie, A.C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy and S.J. Pearton, IEEE Electron. Dev. Lett. 23, 505 (2002).

82.               “Wide Bandgap Ferromagnetic Semiconductors and Oxides,” S.J. Pearton, C.R. Abernathy, M.E. Overberg, G. Thaler, D.P. Norton, N. Theodoropoulou, A.F. Hebard, Y.D. Park, F. Ren, J. Kim and L.A. Boatner, J. Appl. Phys. 93, 1 (2003).

83.               “AlGaN/GaN MOSHEMT Using Sc2O3 as the Gate Oxide and Surface Passivation,” R. Mehandru, B. Luo, J. Kim, F. Ren, B. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via and A. Crespo, Appl. Phys. Lett. 82, 2530 (2003).

84.               “Thermal Stability of WSix and W Schottky Contacts on n-GaN,” J. Kim, F. Ren, A.G. Baca and S.J. Pearton, Appl. Phys. Lett. 82, 3263 (2003).

85.              “GaN and Other Materials for Semiconductor Spintronics,” S.J. Pearton, Y.D. Park, C.R. Abernathy, M.E. Overberg, G.T. Thaler, J. Kim and F. Ren, J. Electron. Mater. 32, 288 (2003).

86.               “Improved Morphology for Ohmic Contacts to AlGaN/GaN HEMTs using WSix on W-Based Metallization,” B. Luo, F. Ren, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.G. Bacca, R.D. Briggs, D. Gotthold, R. Ritkchan, B. Peres and S.J. Pearton, Appl. Phys. Lett. 82, 3910 (2003).

87.               “Carrier-Mediated Ferromagnetic Ordering in Mn Ion-Implanted p+ GaAs(C),” Y.D. Park, J.D. Lim, K.S. Suh, S.B. Shim, J.S. Lee, C.R. Abernathy, S.J. Pearton, Y.S. Kim, Z.G. Khim and R.G. Wilson, Phys. Rev. B 68, 085210 (2003).

88.               “160A Bulk GaN Schottky Diode Array,” K. Baik, Y. Irokawa, J. Kim, J. La Roche, F. Ren, S.S. Park, Y.J. Park and S.J. Pearton, Appl. Phys. Lett. 83, 3192 (2003).

89.              “Wide Bandgap GaN-Based Semiconductors for Spintronics,” S.J. Pearton, C.R. Abernathy, G. Thaler, R.M. Frazier, D.P. Norton, F. Ren, Y.D. Park, J.M. Zavada, I.A. Buyanova, W.M. Chen and A.F. Hebard, J. Phys. Condensed Matter 16, R209 (2004).

90.              “AlGaN/GaN MOS Diode-Based Hydrogen Gas Sensors,” B.S. Kang, F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 84, 1123 (2004).

91.               “Magnetic Semiconductors: Si-Based Spintronics,” S.J. Pearton, Nature Materials 3, 203 (2004).

92.               “Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN HEMTs,” B.S. Kang, R. Mehandru, S. Kim, F. Ren, R. Fitch, J. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, B.P. Gila, C.R. Abernathy and S.J. Pearton,  Appl. Phys. Lett. 84 4635 (2004).

93.               “Depletion-mode ZnO nanowire field-effect transistor,” Y. W. Heo, L. C. Tien, Y. Kwon,  D. P. Norton, S. J. Pearton, B. S. Kang, F. Ren, Appl. Phys. Lett. 85, 2274 (2004).

94.               “Recent Progress in processing and properties of  ZnO,” S.J. Pearton, D.P. Norton, K. Ip,   Y.W. Heo and T. Steiner, Prog. Mater. Sci. 50 293 (2005).

95.               “ZnO nanowire growth and devices,” Y.W. Heo, D.P. Norton, L.C. Tien, Y. Kwon, B.S. Kang, F. Ren, S.J. Pearton and J.R. LaRoche, Mat. Sci. Eng. R 47 1 (2004).

96.               “pH measurements with single ZnO nanorods integrated with a microchannel,” B.S. Kang, F. Ren, Y.W. Heo, L.C. Tien, D.P. Norton and S.J. Pearton, Appl. Phys. Lett. 86 112105 (2005).

97.               “Remote sensing system for hydrogen using GaN Schottky diodes,” A. El. Kouche, J. Lin, M.E. Law, S. Kim, B.S. Kim, F. Ren and S.J. Pearton, Sensors and Actuators B: Chemical 105 329 (2005).

98.               “Hydrogen-selective sensing at room temperature with ZnO nanorods”,
H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton, and Jenshan Lin, Appl. Phys. Lett. 86, 243503 (2005).

99.               “Electrical detection of immobilized proteins with ungated AlGaN/GaN HEMTs”, B.S. Kang, F. Ren, L. Wang, C. Lofton, W.W. Tan, S.J. Pearton, A. Dabiran, A. Osinsky and P.P.Chow, Appl.Phys.Lett.87,023508 (2005).

100.          “Room temperature hydrogen selective sensing using single Pt-coated ZnO nanowires at microwatt power levels”, L. Tien, H.T. Wang, B.S. Kang, F. Ren, P.W. Sadik, D.P. Norton, S.J. Pearton and J.Lin, Electrochem. Solid-State Lett.8 G239(2005).

101.           “AlGaN/GaN –Based Diodes and Gateless HEMTs for Gas and Chemical Sensing”, B.S. Kang, S. Kim, F. Ren, B.P. Gila, C.R. Abernathy and S.J. Pearton, IEEE Sensors Journal 5,677(2005).

102.           “Spintronics device concepts”, S.J. Pearton, D.P. Norton, R. Frazier, S.Y. Han, C.R. Abernathy and J.M. Zavada, IEE Proc-Circuits, Devices and Systems 152, 312(2005).

103.           “Electroluminescence from ZnO nanowire/polymer composite on junction”, C.Chang, F.Tsao, C.J.Pan, G.C. Chi, H.T. Wang, J.J.Chen, F. Ren, D.P. Norton, S.J. Pearton, K.H.Chen and L.C.Chen, Appl. Phys. Lett. 88,173503 (2006).

104.           “Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors”, B. S. Kang, S. J. Pearton, J. J. Chen, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys.Lett. 89, 122102 (2006).

105. “Electrical Detection of Kidney Injury Molecule-1 With AlGaN/GaN High Electron                       Mobility Transistors”, H.T.Wang, B.S.Kang, F.Ren, S.J.Pearton, J.W.Johnson, P.                         Rajagopal, J.C.Roberts, E.L.Piner and K.J.Linthicum, Appl. Phys.Lett.91, 222101(2007).

106.   “Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors”, B. S. Kang, H. T. Wang, F. Ren, S. J. Pearton, T. E.Morey, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett. 91, 252103 (2007).

107. “Penetrating living cells using semiconductor nanowires”, S. J. Pearton, T. Lele, Y. Tseng and F. Ren, Trends in Biotechnology, 25, 481(2007).

108. “Prostate Specific Antigen Detection using AlGaN/GaN High Electron Mobility                           Transistors”, B. S. Kang, H. T. Wang, T. P.  Lele, F. Ren, S. J. Pearton, J.W. Johnson,                  P. Rajagopal, J.C. Roberts, E.L. Piner and K.J. Linthicum, Appl. Phys. Lett. 91, 112106               (2007).

 

Selected Invited Conference Papers

 

1.                "The Properties of Hydrogen in Crystalline Si," S.J. Pearton, 13th Intl. Conf. Defects in Semiconductors, and J. Electron Mat. 14, 737 (1984).

2.                "Rapid Annealing of GaAs and Related Compounds," J.S. Williams and S.J. Pearton, MRS Fall Meeting 1984 and Mat. Res. Soc. Symp. Proc. 35, 427 (1985).

3.                "Rapid Thermal Annealing in GaAs IC Processing," S.J. Pearton, K.D. Cummings, and G.P. Vella-Coleiro., State of the Art Program on Compound Semiconductors, Toronto, May 12-17, 1985 Electrochemical Society Spring Meeting.

4.                "Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs," D.C. Jacobson, S.J. Pearton, R. Hull, J.M. Poate and J.S. Williams, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 52, 361 (1986).